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PD - 95316
IRFL1006PBF
HEXFET(R) Power MOSFET
Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
D
VDSS = 60V RDS(on) = 0.22
G S
ID = 1.6A
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy * Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
2.3 1.6 1.3 6.4 2.1 1.0 8.3 20 54 1.6 0.1 5.0 -55 to + 150
Units
A
W W
mW/C
V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90 50
Max.
120 60
Units
C/W
* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
05/26/04
IRFL1006PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units Conditions 60 --- --- V VGS = 0V, ID = 250A --- 0.057 --- V/C Reference to 25C, ID = 1mA --- --- 0.22 VGS = 10V, ID = 1.6A 2.0 --- 4.0 V VDS = VGS, ID = 250A 3.0 --- --- S VDS = 25V, ID = 1.6A --- --- 25 VDS = 60V, VGS = 0V A --- --- 250 VDS = 48V, VGS = 0V, TJ = 125C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 8.0 ID = 1.6A --- --- 1.7 nC VDS = 48V --- --- 3.3 VGS = 10V, See Fig. 6 and 9 --- 7.4 --- VDD = 30V --- 18 --- ID = 1.6A ns --- 18 --- RG = 49 --- 17 --- RD = 19, See Fig. 10 --- 160 --- VGS = 0V --- 55 --- pF VDS = 25V --- 19 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol --- --- 1.6 showing the A integral reverse --- --- 6.4 p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 1.6A, VGS = 0V --- 31 47 ns TJ = 25C, I F = 1.6A --- 46 68 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 42 mH RG = 25, IAS = 1.6A. (See Figure 12) ISD 1.6A, di/dt 260A/s, VDD V (BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%.
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IRFL1006PBF
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
1
4.5V
4.5V
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
TJ = 25 C
TJ = 150 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 1.6A
I D , Drain-to-Source Current (A)
2.0
1.5
1
1.0
0.5
0.1 4.0
V DS = 25V 20s PULSE WIDTH 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFL1006PBF
300
VGS , Gate-to-Source Voltage (V)
240
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 1.6A VDS = 48V VDS = 30V VDS = 12V
16
C, Capacitance (pF)
180
Ciss
12
120
Coss
8
60
4
Crss
0
1
10
100
0 0 2 4
FOR TEST CIRCUIT SEE FIGURE 13
6 8 10
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
TJ = 150 C
10
1
100us
TJ = 25 C
1
1ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
0.1 1
TC = 25 C TJ = 150 C Single Pulse
10
10ms
100
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFL1006PBF
2.0
VDS VGS
RD
ID , Drain Current (A)
1.5
D.U.T.
+
RG
- VDD
1.0
10V
Pulse Width 1 s Duty Factor 0.1 %
0.5
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )
100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 PDM t1 t2
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFL1006PBF
EAS , Single Pulse Avalanche Energy (mJ)
140 120 100 80 60 40 20 0
15V
ID 0.72A 1.0A BOTTOM 1.6A TOP
VDS
L
DRIVER
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
Starting TJ , Junction Temperature ( C)
V(BR)DSS tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRFL1006PBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+ +
-
RG
* * * *
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFL1006PBF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
PART NUMBER INTERNATIONAL RECTIFIER LOGO
LOT CODE AXXXX
FL014 314P
A = ASSEMBLY SITE DATE CODE CODE (YYWW) YY = YEAR WW = WEEK P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL)
TOP
BOTTOM
8
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IRFL1006PBF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161) 3.90 (.154) 0.35 (.013) 0.25 (.010) 1.85 (.072) 1.65 (.065)
TR
2.05 (.080) 1.95 (.077)
7.55 (.297) 7.45 (.294)
7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272)
16.30 (.641) 15.70 (.619)
2.30 (.090) 2.10 (.083)
NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4
330.00 (13.000) MAX.
50.00 (1.969) MIN.
NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566) 12.40 (.488)
18.40 (.724) MAX. 4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/04
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